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| 特点 |
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Features |
| ■ 芯片与底板电气绝缘,2500V交流电压 |
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■ The chip and base-board are electric-insulation, 2500V AC voltage |
| ■ 芯片与底板电气绝缘,2500V交流电压 |
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■ Packing with international standard |
| ■ 全压接结构,优良的温度特 性和功率循环能力 |
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■ Completely press-connection structure, with super temperature properties and power-cycling capability |
| ■ 200A以下模块皆为强迫风冷,300A以上模块,既可选用风冷,也可选用水冷 |
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■ The module below 200A are all forced wind-cooling, the module above 300A could select wind cooling or water-cooling for use. |
| ■ 安装简单,使用维修方便 |
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■ The installation,use as well as maintenance are simple |
| ■体积小,重量轻 |
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■ Small volume and light weight |
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| 典型应用 |
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Typical-application |
| ■ 逆变器 |
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■ Contravariant device |
| ■ 感应加热 |
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■ Induction heating |
| ■ 斩波器 |
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■ Chopper |
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| 说明 |
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Instruction |
| ■ VDSM/VRSM=VDRM/VRRM+200V |
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■ VDSM/VRSM=VDRM/VRRM+200V |
| ■ 除非另作说明,IGT、VGT、IH、VTM、VFM、Viso均为25℃下的测试值。表中其它参数皆为Tjm下的测试值。 |
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■ Only if proved separately, theIGT、VGT、IH、VTM、VFM、Viso are the tested &#118alue below 25℃, other parameters inside form all are the tested &#118alue below Tjm |
■ I2t=I2TSMtw/2;式中tw:正弦半波电流底宽 在50Hz频率下,I2t(10ms)=0.005I2TSM(A2S) | |
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| ■ I2t=I2TSMtw/2;式中tw:正弦半波电流底宽 | the tw inside equation is sine semi-wave current base-width, in the case of 50Hz, |
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■ 当使用在频率为60Hz情况下,
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■ If used in the case of frequency below 60Hz, |
| ITSM(8.3ms)=1.066ITSM(10ms),I2t(8.3ms)=0.943I2t(10ms) |
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ITSM(8.3ms)=1.066ITSM(10ms),I2t(8.3ms)=0.943I2t(10ms) |